Radiation hardness of CMS pixel barrel modules

Pixel detectors are used in the innermost part of the multi purpose experiments at LHC and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of all detector components has thoroughly been tested up to the fluences expected at the LHC. In case of an LHC upgrade, the fluence will be much higher and it is not yet clear how long the present pixel modules will stay operative in such a harsh environment. The aim of this study was to establish such a limit as a benchmark for other possible detector concepts considered for the upgrade. As the sensors and the readout chip are the parts most sensitive to radiation damage, samples consisting of a small pixel sensor bump-bonded to a CMS-readout chip (PSI46V2.1) have been irradiated with positive 200 MeV pions at PSI up to 6E14 Neq and with 21 GeV protons at CERN up to 5E15 Neq. After irradiation the response of the system to beta particles from a Sr-90 source was measured to characterise the charge collection efficiency of the sensor. Radiation induced changes in the readout chip were also measured. The results show that the present pixel modules can be expected to be still operational after a fluence of 2.8E15 Neq. Samples irradiated up to 5E15 Neq still see the beta particles. However, further tests are needed to confirm whether a stable operation with high particle detection efficiency is possible after such a high fluence.Comment: Contribution to the 11th European Symposium on Semiconductor Detectors June 7-11, 2009 Wildbad Kreuth, German

A possible characterization of suffusion susceptibility independent of the hydraulic loading history?

Suffusion is a complex phenomenon which involves selective erosion of fine particles under the effect of seepage flow in the matrix of coarser particles. With the objective to characterize suffusion susceptibility, a series of downward seepage flow tests was realized with a triaxial erodimeter developed in our laboratory. Three different cohesionless soils were tested under controlled hydraulic gradient or under controlled flow rate. This study shows the significant effect of hydraulic loading history on the value of critical hydraulic gradient. Moreover, method characterizing the erosion susceptibility based on rate of erosion doesn’t lead to a unique characterization of suffusion process for different histories of hydraulic loading. The new analysis is based on energy expended by the seepage flow to characterize the hydraulic loading and the cumulative eroded dry mass to characterize the soil response. The results demonstrate that this approach is effective to characterize suffusion susceptibility for cohesionless soils

Signal height in silicon pixel detectors irradiated with pions and protons

Pixel detectors are used in the innermost part of multi purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of the detectors has thoroughly been tested up to the fluences expected at the LHC. In case of an LHC upgrade the fluence will be much higher and it is not yet clear up to which radii the present pixel technology can be used. In order to establish such a limit, pixel sensors of the size of one CMS pixel readout chip (PSI46V2.1) have been bump bonded and irradiated with positive pions up to 6E14 Neq/cm^2 at PSI and with protons up to 5E15 Neq/cm^2. The sensors were taken from production wafers of the CMS barrel pixel detector. They use n-type DOFZ material with a resistance of about 3.7kOhm cm and an n-side read out. As the performance of silicon sensors is limited by trapping, the response to a Sr-90 source was investigated. The highly energetic beta-particles represent a good approximation to minimum ionising particles. The bias dependence of the signal for a wide range of fluences will be presented.Comment: Contribution to the 7th International Conference on Radiation Effects on Semiconductor Materials, Detectors and Devices October 15-17, 2008 Firenze, Ital

Pendulum limit, chaos and phase-locking in the dynamics of ac-driven semiconductor superlattices

We describe a limiting case when nonlinear dynamics of an ac-driven semiconductor superlattice in the miniband transport regime is governed by a periodically forced and damped pendulum. We find analytically the conditions for a transition to chaos and consider an influence of temperature on the effect. We also discuss fractional dc voltage states in a superlattice originating from phase-locked states of the pendulum.Comment: 8 pages, no figures. Version2 is strongly revised: new physics, more references. 3 appendixes of this Eprint are absent in the manuscript submitted to journa

Dissipative Chaos in Semiconductor Superlattices

We consider the motion of ballistic electrons in a miniband of a semiconductor superlattice (SSL) under the influence of an external, time-periodic electric field. We use the semi-classical balance-equation approach which incorporates elastic and inelastic scattering (as dissipation) and the self-consistent field generated by the electron motion. The coupling of electrons in the miniband to the self-consistent field produces a cooperative nonlinear oscillatory mode which, when interacting with the oscillatory external field and the intrinsic Bloch-type oscillatory mode, can lead to complicated dynamics, including dissipative chaos. For a range of values of the dissipation parameters we determine the regions in the amplitude-frequency plane of the external field in which chaos can occur. Our results suggest that for terahertz external fields of the amplitudes achieved by present-day free electron lasers, chaos may be observable in SSLs. We clarify the nature of this novel nonlinear dynamics in the superlattice-external field system by exploring analogies to the Dicke model of an ensemble of two-level atoms coupled with a resonant cavity field and to Josephson junctions.Comment: 33 pages, 8 figure

Δ133p53β isoform pro-invasive activity is regulated through an aggregation-dependent mechanism in cancer cells

International audienceAbstract The p53 isoform, Δ133p53β, is critical in promoting cancer. Here we report that Δ133p53β activity is regulated through an aggregation-dependent mechanism. Δ133p53β aggregates were observed in cancer cells and tumour biopsies. The Δ133p53β aggregation depends on association with interacting partners including p63 family members or the CCT chaperone complex. Depletion of the CCT complex promotes accumulation of Δ133p53β aggregates and loss of Δ133p53β dependent cancer cell invasion. In contrast, association with p63 family members recruits Δ133p53β from aggregates increasing its intracellular mobility. Our study reveals novel mechanisms of cancer progression for p53 isoforms which are regulated through sequestration in aggregates and recruitment upon association with specific partners like p63 isoforms or CCT chaperone complex, that critically influence cancer cell features like EMT, migration and invasion